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(R)
STTA2006P/PI
TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE
MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM trr (typ) VF (max) 20A 600V 30ns 1.5V
K
FEATURES AND BENEFITS
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s
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SPECIFIC TO "FREEWHEEL MODE" OPERATIONS: FREEWHEEL OR BOOSTER DIODE. ULTRA-FAST AND SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR. HIGH FREQUENCY OPERATIONS. INSULATED PACKAGE : DOP3I Electrical insulation : 2500VRMS Capacitance < 12 pF
A K
K
A
SOD93 STTA2006P
Isolated DOP3I STTA2006PI
DESCRIPTION The TURBOSWITCH is a very high performance series of ultra-fast high voltage power diodes from 600V to 1200V. TURBOSWITCH family, drastically cuts losses in both the diode and the associated switching IGBT or MOSFET in all "freewheel mode" operations ABSOLUTE RATINGS (limiting values) Symbol VRRM VRSM IF(RMS) IFRM IFSM Tj Tstg Parameter Repetitive peak reverse voltage Non repetitive peak reverse voltage RMS forward current Repetitive peak forward current Surge non repetitive forward current tp = 5 s F = 5kHz square tp=10 ms sinusoidal Value 600 600 50 270 180 150 -65 to 150 Unit V V A A A C C and is particularly suitable and efficient in Motor control freewheel applications and in booster diode applications in power factor control circuitries. Packaged either in SOD93 or in DOP3I, these
Maximum operating junction temperature Storage temperature range
TM : TURBOSWITCH is a trademark of STMicroelectronics
May 2002 - Ed: 4D
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THERMAL AND POWER DATA Symbol Rth(j-c) P1 Pmax Parameter Junction to case thermal resistance Conduction power dissipation IF(AV) = 20A =0.5 Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) Test conditions SOD93 DOP3I SOD93 DOP3I SOD93 DOP3I Tc= 96C Tc= 74C Tc= 90C Tc= 66C Value 1.5 2.1 36 40 Unit C/W W W
STATIC ELECTRICAL CHARACTERISTICS Symbol VF IR
*
Parameter Forward voltage drop Reverse leakage current Threshold voltage Dynamic resistance
* tp = 380 s, < 2% ** tp = 5 ms, < 2%
Test conditions IF =20A VR =0.8 x VRRM Ip < 3.IAV Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 125C
Min
Typ 1.25 2.5
Max 1.75 1.5 100 6 1.15 17
Unit V V A mA V m
**
Vto rd
Test pulse :
To evaluate the maximum conduction losses use the following equation : P = Vto x IF(AV) + rd x IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS TURN-OFF SWITCHING Symbol trr Parameter Reverse recovery time Maximum reverse recovery current Softness factor Test conditions Tj = 25C IF = 0.5 A IR = 1A Irr = 0.25A IF = 1A dIF/dt =-50A/s VR =30V Tj = 125C VR = 400V dIF/dt = -160 A/s dIF/dt = -500 A/s Tj = 125C VR = 400V dIF/dt = -500 A/s IF =20A 12.5 17.5 IF =20A 0.42 / Min Typ 30 60 A Max Unit ns
IRM
S factor
TURN-ON SWITCHING Symbol tfr Parameter Forward recovery time Test conditions Tj = 25C IF = 20A, dIF/dt = 160 A/s measured at, 1.1 x VFmax Min Typ Max 600 V 12 Unit ns
VFp
Peak forward voltage Tj = 25C IF =20A, dIF/dt = 160 A/s
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STTA2006P/PI
Fig. 1: Conduction losses versus average current.
P1(W) 50
Fig. 2: Forward voltage drop versus forward current.
VFM(V) 3.50
T
MAXIMUM VALUES
3.00
40 30 20
=0.5 =0.1 =0.2
2.50
=tp/T tp
Tj=125 oC
2.00
=1
1.50 1.00 0.50
10 0 0 IF(av)(A) 2 4 6 8 10 12 14 16 18 20
IFM(A)
0.00 0.1
1
10
100 200
Fig. 3: Relative variation of thermal transient impedance junction to case versus pulse duration.
Fig. 4: Peak reverse recovery current versus dIF/dt.
IRM(A) 40.0 37.5 90% CONFIDENCE Tj=125 oC 35.0 VR=400V 32.5 IF=40A 30.0 27.5 25.0 22.5 IF=20A 20.0 17.5 15.0 IF=10A 12.5 10.0 7.5 5.0 2.5 dIF/dt(A/ s) 0.0 0 100 200 300 400 500 600 700 800 900 1000
Fig. 5: Reverse recovery time versus dIF/dt.
trr(ns) 250 225 200 175 150 125 100 75 50 25 0 0
IF=10A IF=40A IF=20A 90% CONFIDENCE Tj=125 oC
Fig. 6: Softness factor (tb/ta) versus dIF/dt.
S factor 1.2 Typical values Tj=125 oC 1.1 1.0 IF<2xIF(av) 0.9 VR=400V 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 dIF/dt(A/ s) 0.0 0 100 200 300 400 500 600 700 800 900 1000
VR=400V
dIF/dt(A/ s)
100 200 300 400 500 600 700 800 900 1000
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STTA2006P/PI
Fig. 7: Relative variation of dynamic parameters versus junction temperature (reference Tj=125C).
2.50 2.25 2.00
S factor
Fig. 9: Transient peak forward voltage versus dIF/dt.
VFP(V) 16 15 90% CONFIDENCE Tj=125 oC 14 IF=IF(av) 13 12 11 10 9 8 7 6 5 4 3 2 1 dIF/dt(A/ s) 0 0 50 100 150 200 250
1.75 1.50 1.25 1.00
IRM
0.75
Tj(oC)
0.50 0
25
50
75
100
125
150
300
350
400
Fig. 9: Forward recovery time versus dIF/dt.
tfr(ns) 600 90% CONFIDENCE Tj=125 oC 550 VFr=1.1*VF max. 500 IF=IF(av) 450 400 350 300 250 200 150 100 50 dIF/dt(A/ s) 0 0 50 100 150 200 250 300 350 400 450 500
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APPLICATION DATA The TURBOSWITCH is especially designed to provide the lowest overall power losses in any "FREEWHEEL Mode" application (Fig.A) considering both the diode and the companion transistor, thus optimizing the overall performance in the end application. The way of calculating the power losses is given below:
TOTAL LOSSES due to the diode P = P1+ P2+ P3+ P4+ P5
Watts
CONDUCTION LOSSES in the diode
REVERSE LOSSES in the diode
SWITCHING LOSSES in the diode
SWITCHING LOSSES in the tansistor due to the diode
Fig. A : "FREEWHEEL" MODE.
SWITCHING TRANSISTOR
DIODE: TURBOSWITCH
IL
VR
t T F = 1/T = t/T
LOAD
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APPLICATION DATA (Cont'd) Fig. B: STATIC CHARACTERISTICS Conduction losses :
I
P1 = Vt0 . IF(AV) + Rd . IF2(RMS)
IF Rd VR V IR V tO VF
Reverse losses : P2 = VR . IR . (1 - )
Fig. C: TURN-OFF CHARACTERISTICS
V IL TRANSISTOR I t
Turn-on losses : (in the transistor, due to the diode) P5 =
V R x I RM
2
x( 3+
2xS )xF
6 x dI F dt V R x I RM x I L x ( S + 2 ) x F + 2 x dI F dt
I dI F /dt V I RM ta tb t dI R /dt VR
trr = ta + tb S = tb / ta
DIODE
Turn-off losses (in the diode) : P3 =
V R x I RM
2
xSxF
6 x dI F
dt
P3 and P5 are suitable for power MOSFET and IGBT
Fig. D: TURN-ON CHARACTERISTICS
IF dI F /dt I Fmax
0 VF V Fp
t
Turn-on losses : P4 = 0.4 (VFP - VF) . IFmax . tfr . F
1.1V F 0 tfr
VF t
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PACKAGE MECHANICAL DATA SOD93 DIMENSIONS REF. A C D D1 E F F3 G H L L2 L3 L5 L6 O Cooling method : by conduction (C) Recommended torque value : 0.8 m.N Maximum torque value : 1.0 m.N 4.00 3.95 31.00 4.10 0.157 18.0 4.15 0.156 1.220 0.161 10.80 14.70 0.50 1.10 1.75 11.10 0.425 15.20 0.578 12.20 16.20 0.709 0.163 Millimeters 4.70 1.17 2.50 1.27 0.78 0.020 1.30 0.043 0.069 0.437 0.598 0.480 0.638 4.90 0.185 1.37 0.046 0.098 0.050 0.031 0.051 Inches 0.193 0.054 Min. Typ. Max. Min. Typ. Max.
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PACKAGE DATA DOP3I ISOLATED DIMENSIONS REF. A B C D E F G H K L N P R Cooling method : by conduction (C) Recommended torque value : 0.8 m.N. Maximum torque value : 1.0 m.N. Millimeters Min. 4.4 1.45 14.35 0.5 2.7 15.8 20.4 15.1 3.4 4.08 10.8 1.20 4.60 Typ. Max. Min. 4.6 0.173 1.55 0.057 15.60 0.565 0.7 2.9 0.020 0.106 Inches Typ. Max. 0.181 0.061 0.614 0.028 0.114 0.650 0.831 0.610 0.144 0.164 0.444 0.055 0.181
16.5 0.622 21.1 0.815 15.5 0.594 3.65 0.134 4.17 0.161 11.3 0.425 1.40 0.047
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s
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Ordering type STTA2006P STTA2006PI
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Marking STTA2006P STTA2006PI
Package SOD93 DOP3I
Weight 3.79g 4.52g
Base qty 30 120
Delivery mode Tube Bulk
Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 8/8

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